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Self-sensitizable neuromorphic device based on adaptive hydrogen gradient

https://doi.org/10.1016/j.matt.2024.03.002

Zhang, Tao; Hu, Mingjie; Ahmed_Mia, Md Zesun; Zhang, Hao; Mao, Wei; Fukutani, Katsuyuki; Matsuzaki, Hiroyuki; Wen, Lingzhi; Wang, Cong; Zhao, Hongbo; et al (May 2024, Matter)

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Complementary Vanadium Dioxide Metamaterial with Enhanced Modulation Amplitude at Terahertz Frequencies

https://doi.org/10.1103/PhysRevApplied.18.054086

Huang, Yuwei; Wu, Xuefei; Schalch, Jacob; Duan, Guangwu; Chen, Chunxu; Zhao, Xiaoguang; Kaj, Kelson; Zhang, Hai-Tian; Engel-Herbert, Roman; Averitt, Richard D.; et al (November 2022, Physical Review Applied)

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Efficient Probabilistic Computing with Stochastic Perovskite Nickelates

https://doi.org/10.1021/acs.nanolett.2c03223

Park, Tae Joon; Selcuk, Kemal; Zhang, Hai-Tian; Manna, Sukriti; Batra, Rohit; Wang, Qi; Yu, Haoming; Aadit, Navid Anjum; Sankaranarayanan, Subramanian K.; Zhou, Hua; et al (November 2022, Nano Letters)

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Reconfigurable perovskite nickelate electronics for artificial intelligence

https://doi.org/10.1126/science.abj7943

Zhang, Hai-Tian; Park, Tae Joon; Islam, A. N.; Tran, Dat S.; Manna, Sukriti; Wang, Qi; Mondal, Sandip; Yu, Haoming; Banik, Suvo; Cheng, Shaobo; et al (February 2022, Science)

Hydrogen-doped perovskites can be reconfigured by electrical pulses to take on all essential functions necessary for artificial intelligence hardware.
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Oxygen vacancy dynamics in monoclinic metallic VO ₂ domain structures

https://doi.org/10.1063/5.0083771

Schrecongost, Dustin; Zhang, Hai-Tian; Engel-Herbert, Roman; Cen, Cheng (February 2022, Applied Physics Letters)

It was demonstrated recently that the nano-optical and nanoelectronic properties of VO₂can be spatially programmed through the local injection of oxygen vacancies by atomic force microscope writing. In this work, we study the dynamic evolution of the patterned domain structures as a function of the oxygen vacancy concentration and the time. A threshold doping level is identified that is critical for both the metal–insulator transition and the defect stabilization. The diffusion of oxygen vacancies in the monoclinic phase is also characterized, which is directly responsible for the short lifetimes of sub-100 nm domain structures. This information is imperative for the development of oxide nanoelectronics through defect manipulations.
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